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首页> 外文期刊>Applied Physics Letters >Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition
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Metal delocalization and surface decoration in direct-write nanolithography by electron beam induced deposition

机译:电子束诱导沉积在直接纳米光刻中的金属离域和表面修饰

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The ability to interconnect different nanostructures is crucial to nanocircuit fabrication efforts. A simple and versatile direct-write nanolithography technique for the fabrication of interconnects is presented. Decomposition of a metalorganic precursor gas by a focused electron beam resulted in the deposition of conductive platinum nanowires. The combination of in situ secondary electron imaging with deposition allows for the simultaneous identification and interconnection of nanoscale components. However, the deposition was not entirely localized to the electron beam raster area, as shown by secondary ion mass spectrometry measurements. The electrical impact of the metallic spread was quantified by measuring the leakage current between closely spaced wires. The origins of the spread and strategies for minimizing it are discussed. These results indicate that, while this direct-write methodology is a convenient one for rapid prototyping of nanocircuits, caution must be used to avoid unwanted decoration of nanostructures by metallic species.
机译:互连不同纳米结构的能力对于纳米电路制造工作至关重要。提出了一种简单而通用的直接写入纳米光刻技术,用于制造互连。金属有机前体气体被聚焦电子束分解导致导电铂纳米线的沉积。原位二次电子成像与沉积相结合,可以同时识别和互连纳米级组件。然而,如二次离子质谱测量所示,沉积并不完全局限于电子束栅格区域。通过测量紧密间隔的导线之间的泄漏电流,可以量化金属散布的电冲击。讨论了传播的根源和将其最小化的策略。这些结果表明,尽管这种直接写入方法是一种用于快速制作纳米电路原型的便捷方法,但必须谨慎使用,以免金属物质对纳米结构进行不必要的装饰。

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