Generation and detection of terahertz pulses using post-process bonding of low-temperature-grown GaAs and AlGaAs

摘要

We present an electro-optical method to measure very high frequency characteristics of planar electronic devices. This method allows one to generate and detect subpicosecond electrical pulses on a coplanar stripline using photoconduction and electroabsorption sampling in transferred low-temperature-grown epitaxial layers. The epitaxial lifted-off films are directly van der Waals bonded on the transmission line under test. Good switching efficiency and short electrical rise time (<490 fs) are measured. A bandwidth of 2.5 THz with 60 dB of dynamic range is obtained. This confers to the technique a large field of applications in ultrahigh-speed electronic measurements.