Excellent frequency dispersion of thin gadolinium oxide high-k gate dielectrics

摘要

In this letter, we reported a high-k gadolinium oxide (Gd_2O_3) gate dielectric formed by reactive rf sputtering. It is found that the Gd_2O_3 gate dielectric film exhibits excellent electrical properties such as low leakage current density, high breakdown voltage, and almost no hysteresis and frequency dispersion in C-V curves comparable to that of HfO_2 film. This indicates that postprocessing treatments can reduce a large amount of interface trap and can passivate a large amount of trapped charge at defect sites.