InGaN nanorings and nanodots by selective area epitaxy

摘要

An integrated process to fabricate controllable arrays of semiconductor nanorings and nanodots on patterned surfaces is presented. This approach is based on pattern transfer of nanopores to a SiO_2 layer, followed by selective epitaxial growth of InGaN onto an underlying GaN substrate using metalorganic chemical vapor deposition. Using this approach, crystalline InGaN nanorings and nanodots ～80 nm in diameter have been grown on GaN surfaces. The formation mechanism of the nanorings and nanodots is described based on the initial stage of selective growth and restricted atom migration in a confined hole. Strong photoluminescence obtained at room temperature from the noncapped nanorings indicates strong confinement of the excitons in the nanostructures. This approach enables fabrication of dense, uniform arrays of epitaxial nanostructures and is potentially applicable to a variety of materials systems.