Structure and composition of non-polar (11-20) InGaN nanorings grown by modified droplet epitaxy

摘要

Droplets grown by modified droplet epitaxy on non-polar (11-20) surfaces of InGaN epilayers on GaN have been seen to be associated with underlying ring-like structures. This work discusses droplet etching as a possible mechanism for ring formation, and droplet creeping as a possible explanation for the droplets sitting askew of the ring centre. Transmission electron microscopy (TEM) analysis shows the droplets to move along the < 0001 > c-axis, and indicates that they have a very high indium content. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim