Rectifying 'nanohomo' contacts of W-Ga-C composite pad and nanowire fabricated by focused-ion-beam-induced chemical vapor deposition

摘要

We prepared W-Ga-C composite contacts on W-Ga-C composite nanowires by focused-ion-beam-induced chemical vapor deposition using a dual-beam scanning electron microscope/focused-ion-beam system. The current-voltage (Ⅰ-Ⅴ) characteristics of wires were found to change from nonlinear to linear with increasing wire thickness. For wires with small dimensions, which result in strong nonlinear Ⅰ-Ⅴ behavior at room temperature, pairs of contacts were fabricated along the wire under different ion energies and scanning modes. Nonlinear and asymmetric rectifying Ⅰ-Ⅴ characteristics were observed. The results suggest that nanoscaled W-Ga-C nanowires may behave similarly to semiconductors and that the contact characteristics may be modified using different deposition conditions. Furthermore, ohmiclike junctions could be formed through the use of specific deposition conditions for the contact pads and nanowires.