Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots

摘要

The influence of an in-plane electric field on the optical properties of single quantum dots is investigated. On a sample containing a plane of InAs/GaAs dots, micrometer-size electro-optical structures were produced in order to apply an external electric field in the dot plane. A large decrease of the anisotropic exchange splitting, correlated with the in-plane Stark shift, is observed.