Electron-hole separation of zero-dimensional excitons in a single self-organized InAs quantum dot studied under normal and in-plane electric fields

摘要

The Stark shift of a single self-organized InAs quantum dot is measured under the top and side gate voltages using a novel GaAs mesa structure. By measuring the shift as a function of the top gate voltage, we estimate the electron-hole separation in a dot along the growth direction. It is shown that this separation changes quite sensitively when the side gate voltage is applied. Possible mechanisms are discussed.