首页> 外文期刊>Applied Physics Letters >Anisotropic ferro- and piezoelectric properties of sol-gel-grown Bi_(3.15)Nd_(0.85)Ti_3O_(12) films with two different orientations on Pt/Ti/SiO_2/Si
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Anisotropic ferro- and piezoelectric properties of sol-gel-grown Bi_(3.15)Nd_(0.85)Ti_3O_(12) films with two different orientations on Pt/Ti/SiO_2/Si

机译:在Pt / Ti / SiO_2 / Si上溶胶生长的Bi_(3.15)Nd_(0.85)Ti_3O_(12)薄膜的各向异性铁和压电特性

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摘要

Bi_(3.15)Nd_(0.85)Ti_3O_(12) thin films of two different preferred orientations were sol-gel grown on Pt/Ti/SiO_2/Si. Using different heating rates during crystallization, either films containing 65% columnar grains with (104)/(014) orientation or fine-grained films with a predominant c-axis orientation were obtained. Anisotropic ferroelectric and piezoelectric properties were determined, with a remanent polarization 2P_r=46.4 μC/cm~2 and a piezoelectric coefficient d_(33)= 17 pm/V in a predominantly (104)/(014)-oriented film, but only 2P_r=16.7μC/cm~2 and d_(33)=5 pm/V in a predominantly c-axis-oriented film. These values confirm that the polarization vector of this material is close to the crystallographic a axis.
机译:在Pt / Ti / SiO_2 / Si上溶胶凝胶生长了两种不同优选取向的Bi_(3.15)Nd_(0.85)Ti_3O_(12)薄膜。在结晶过程中使用不同的加热速率,可以获得包含(65)具有(104)/(014)取向的柱状晶粒的膜或具有主要c轴取向的细晶粒膜。确定了各向异性铁电和压电特性,在主要(104)/(014)取向的薄膜中,剩余极化率为2P_r = 46.4μC/ cm〜2,压电系数d_(33)= 17 pm / V,但只有2P_r在主要为c轴取向的薄膜中,其密度为=16.7μC/ cm〜2,d_(33)= 5 pm / V。这些值证实该材料的偏振矢量接近晶体学a轴。

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