One-dimensional Schottky contact between ErSi_2 nanowire and Si(001)

摘要

We have measured the electric properties of nanosized Schottky contacts formed between ErSi_2 nanowires (NWs) and a Si(001) substrate. Current vs voltage (Ⅰ-Ⅴ) measurement was performed by touching a scanning tunneling microscope tip to the NWs. The current density (J) through the ErSi_2/Si(001) interface increased as the width of the NWs decreased, while no significant changes were observed upon changing the length of the NWs. The ideality factor was estimated by fitting the standard Schottky equation to the obtained J-Ⅴ curves. Our results suggest that the tunneling component increases as the width of the NWs becomes smaller.