Comparison of epitaxial thin layer GaN and InP passivations on InGaAs/GaAs near-surface quantum wells

摘要

The optical properties of the in situ epitaxial GaN and InP passivated InGaAs/GaAs near-surface quantum wells, which were fabricated by metal organic vapor phase epitaxy, are investigated. Low-temperature photoluminescence (PL), time-resolved photoluminescence, and photoreflectance are used to study the passivation effect. Both GaN and InP passivations are observed to significantly enhance the PL intensity and carrier lifetime and to reduce the surface electrical fields. Comparison of the methods shows that the epitaxial InP passivation is more effective. However, epitaxial GaN and nitridation methods are comparable with InP passivation.