Ge-modified Si(100) substrates for the growth of 3C-SiC(100)

摘要

An alternative route to improve the epitaxial growth of 3C-SiC(100) on Si(100) was developed. It consists in covering' the silicon wafers with germanium prior to the carbonization step of the silicon substrate. Transmission electron microscopy and μ-Raman investigations revealed an improvement in the residual strain and crystalline quality of the grown 3C-SiC layers comparable to or better than in the case of 3C-SiC grown on silicon on insulator substrates. These beneficial effects were reached by using a Ge coverage in the range of 0.5-1 monolayer.