Threshold voltage stability of organic field-effect transistors for various chemical species in the insulator surface

摘要

The relationship between the threshold voltage (V_t) stability and the chemical species of the insulator surface was investigated by using organic field-effect transistors with different types of self-assembled monolayers on a SiO_2 insulator. The V_t shift induced by gate bias stressing was considerably increased by the introduction of long-chain chemical species to the SiO_2 surface. In order to obtain high-performance and high-stability organic transistors, insulator surfaces with short-chain chemical species that can improve transistor performance without degrading stability are required.