首页> 外国专利> METHOD FOR CONTROLLING THRESHOLD VOLTAGE IN ORGANIC FIELD-EFFECT TRANSISTOR

METHOD FOR CONTROLLING THRESHOLD VOLTAGE IN ORGANIC FIELD-EFFECT TRANSISTOR

机译:控制有机场效应晶体管的阈值电压的方法

摘要

Provided is a method for suppressing a bias-stress effect in an organic field effect transistor, and simultaneously, controlling a threshold voltage to be a fixed value. A method for the acquired control of threshold voltage in the organic field-effect transistor includes a step of, at a first temperature at which the bias-stress effect occurs, applying a first-value gate voltage to the organic field-effect transistor, thereby causing the bias-stress effects, and a step of, while applying the first-value gate voltage, cooling the transistor to a temperature equal to or lower than a second temperature at which the bias-stress effect is frozen, thereby obtaining the organic field-effect transistor wherein the first value is set to be the threshold voltage at a temperature equal to or lower than the second temperature.
机译:提供一种用于抑制有机场效应晶体管中的偏置应力效应并且同时将阈值电压控制为固定值的方法。一种用于获得的控制有机场效应晶体管中的阈值电压的方法,包括以下步骤:在发生偏置应力效应的第一温度下,将第一值栅极电压施加到有机场效应晶体管,从而引起偏置应力效应的步骤,以及在施加第一值栅极电压的同时将晶体管冷却至等于或低于冻结偏置应力效应的第二温度的温度的步骤,从而获得有机场效应晶体管,其中在等于或低于第二温度的温度下将第一值设置为阈值电压。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号