Magnetic field tuning of hot electron resonant capture in a semiconductor device

摘要

We study hot-electron capture on resonant N-impurities in the dilute nitride Ga(AsN) alloy under high magnetic fields up to 23 T. We show that when the ratio of electric and magnetic fields reaches a critical value, the trajectory of conduction electrons becomes fully localized in real space; this leads to a negative differential conductance and current instabilities tuneable by magnetic field.