Few-Electron Lateral Resonant Tunneling Semiconductor Devices. Contract No N00014-89-C-0091.

摘要

The effort here included design, modeling, fabrication, and characterization of lateral resonant tunneling and quantum point contact structures. Also included was a theoretical investigation of open quantum systems driven far from equilibrium, with emphasis on appropriate boundary conditions for solution of such systems. Accomplishments under this contract include the publication in Reviews of Modern Physics of the results of this foundational study, as well as the development of a graphics-oriented program for the computation and display of two-dimensional self-consistent energy band diagrams. The first lateral resonant tunneling transistors to exhibit both negative differential conductance and negative transconductance were demonstrated. The eigenstates of finite superlattices driven below the Stark localization threshold were also observed.