ZnO-based light-emitting metal-insulator-semiconductor diodes

摘要

The ZnO-based metal-insulator-semiconductor (MIS) diode was fabricated by using an insulator ZnO layer and an n-ZnO layer grown by radio frequency magnetron sputtering. The current-voltage of the ZnO MIS diodes showed a good diode characteristic with a threshold voltage of 8.9 V and a band-edge emission at 380 nm at room temperature. The electroluminescence emission of ZnO MIS was attributed to the generation of holes in the insulating ZnO layer at the high threshold voltage of 8.9 V via an impact ionization process.