ZnO-BASED SEMICONDUCTOR LAYER, METHOD FOR FORMING THE SAME, LIGHT-EMITTING ELEMENT OF ZnO-BASED SEMICONDUCTOR, AND ZnO-BASED SEMICONDUCTOR ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a ZnO-based semiconductor layer which has improved crystallinity, for instance, and the like.;SOLUTION: The ZnO-based semiconductor layer is doped with Mg in a concentration range of 1×10¹⁷ to 2×10²⁰ cm^-3.;COPYRIGHT: (C)2010,JPO&INPIT