METHOD FOR MANUFACTURING ZNO-BASED SEMICONDUCTOR LAYER, METHOD FOR MANUFACTURING ZNO-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND ZNO-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a new technology for forming a p-type ZnO-based semiconductor layer.;SOLUTION: The method for manufacturing the ZnO-based semiconductor layer includes the steps of: (a) supplying Zn, and as needed, Mg, O, N and Te, to the upper part of a base layer to form a single crystal film of Mg_xZn_1-xO (0≤x≤0.6) which is codoped with N and Te; and (b) supplying at least one of Zn and Mg, and Te and N onto the single crystal film of Mg_xZn_1-xO (0≤x≤0.6) to form a single crystal film of Mg_yZn_1-yTe(0≤y≤1) which is doped with N.;COPYRIGHT: (C)2013,JPO&INPIT