TiO2过渡层对Si基ZnO薄膜光致发光特性的影响

摘要

ZnO films were prepared on Si(lOO) substrates by direct current(DC) reactive sputtering with and without Ti(J2 buffer. The crystal structures and optical properties were investigated by X-ray diffraction (XRD) and photoluminescence(PL). The XRD results demonstrated that the crystal grains became larger, crystal boundaries be came fewer, and the crystal quality of ZnO film became better by introducing TiO2 buffer. In addition, stronger ultra violet emission was observed from ZnO film with TiO2 than that without at room temperature. The low temperature photoluminescence was investigated to understand the different PL mechanism of ZnO films.%采用直流反应溅射法在Si(100)衬底上制备了有TiO2过渡层的ZnO薄膜,并与直接在Si上生长的样品进行比较.通过X射线衍射技术和光致发光谱等分别对ZnO薄膜的结构和光学性质进行测量和分析.测量结果表明,引入过渡层后ZnO薄膜的平均晶粒尺寸变大,晶粒间界变少,结晶质量提高,薄膜内的应力得到一定程度的释放.此外,室温光致发光谱表明过渡层使ZnO薄膜的紫外发射明显增强,并研究和分析了其微观机理.