ZnO-based metal-insulator-semiconductor UV light-emitting diodes prepared by ion implantation

摘要

In this paper, we describe the N/sup +/-ion implantation of Ga doped ZnO films grown by chemical vapor deposition on a sapphire substrate. Depositing an appropriate metal onto this system can create a metal-insulator-semiconductor (MIS) type diode. Such ZnO-based MIS diodes, and their emission properties are discussed. The ohmic contact, to the lower conducting ZnO insulating layer, is made by indium. Current-voltage measurements shows good, rectifying diode-like behavior, with a threshold voltage near 3 V, and a reverse current of about 10/sup -6/ A. Under forward bias, ultraviolet emission is observed at room temperature (RT), with a wavelength maximum at /spl sim/388 m (/spl sim/3.197 eV).