Accommodation mechanism of InN nanocolumns grown on Si(111) substrates by molecular beam epitaxy

摘要

High quality InN nanocolumns have been grown by molecular beam epitaxy on bare and AlN-buffered Si(111) substrates. The accommodation mechanism of the InN nanocolumns to the substrate was studied by transmission electron microscopy. Samples grown on AlN-buffered Si(111) show abrupt interfaces between the nanocolumns and the buffer layer, where an array of periodically spaced misfit dislocations develops. Samples grown on bare Si(111) exhibit a thin Si_xN_y at the InN nanocolumn/substrate interface because of Si nitridation. The Si_xN_y thickness and roughness may affect the nanocolumn relative alignment to the substrate. In all cases, InN nanocolumns grow strain- and defect-free.