机译:射频等离子体辅助分子束外延在n-(111)Si衬底上生长的紫外GaN基纳米柱发光二极管
Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan CREST, Japan Science and Technology Agency;
Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;
Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan;
Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan CREST, Japan Science and Technology Agency;
Department of Electrical and Electronics Engineering, Sophia University, 7-1 Kioi-cho, Chiyoda-ku, Tokyo 102-8554, Japan CREST, Japan Science and Technology Agency;
Ⅲ-Ⅴ semiconductors; nanocrystalline materials; light-emitting devices;
机译:射频/等离子体辅助分子束外延在n-(111)Si上生长的GaN / AlGaN纳米柱紫外发光二极管
机译:射频/等离子体辅助分子束外延在n-(111)Si上生长的GaN / AlGaN纳米柱紫外发光二极管
机译:射频等离子体辅助分子束外延生长grown掺杂GaN纳米柱发光二极管的稳定波长操作
机译:通过RF等辅助分子束外延在N-(111)Si基材上生长的紫外线GaN的纳米柱发光二极管
机译:利用氢化物气相外延和分子束外延技术开发基于氮化镓的紫外和可见光发光二极管。
机译:RF-等离子体辅助氧化物分子束外延生长在石英玻璃基板上的VO2热致变色膜
机译:出版商注:“紫外线发光二极管在Semipolar GaN(202¯1)基板上的等离子体辅助分子束外延生长”Appl。物理。吧。 102,111107(2013)