A soluble organic material, polyacrylonitrile (PAN), was investigated for its feasibility of gate dielectric applications. The solution-processed PAN was spin coated in air. Results show that leakage current density as low as 0.3 nA/cm~2 for 50 nm PAN dielectrics could be achieved via process optimization. Functional transistor characteristics were achieved in air for the implementation of PAN in organic thin-film transistors using pentacene or poly(3-hexylthiophene) as a semiconductor material.
展开▼
机译：对可溶性有机材料聚丙烯腈（PAN）进行栅极电介质应用的可行性进行了研究。将溶液处理的PAN在空气中旋涂。结果表明，通过工艺优化可以实现50 nm PAN电介质的漏电流密度低至0.3 nA / cm〜2。使用并五苯或聚（3-己基噻吩）作为半导体材料在有机薄膜晶体管中实现PAN时，可以在空气中实现功能晶体管的特性。
展开▼
