Deep-depletion physics-based analytical model for scanning capacitance microscopy carrier profile extraction

摘要

An approach for fast and accurate carrier profiling using deep-depletion analytical modeling of scanning capacitance microscopy (SCM) measurements is shown for an ultrashallow p-n junction with a junction depth of less than 30 nm and a profile steepness of about 3 nm per decade change in carrier concentration. In addition, the analytical model is also used to extract the SCM dopant profiles of three other p-n junction samples with different junction depths and profile steepnesses. The deep-depletion effect arises from rapid changes in the bias applied between the sample and probe tip during SCM measurements. The extracted carrier profile from the model agrees reasonably well with the more accurate carrier profile from inverse modeling and the dopant profile from secondary ion mass spectroscopy measurements.