Effects Of Artificially Structured Micrometer Holes On The Transport Behavior Of Al-doped Zno Layers

摘要

We study the transport properties of artificially structured n-type ZnO:Al thin films prepared by rf magnetron sputtering on glass substrates. The samples were patterned with an array of 4 × 4 and 8×8 μm~2 holes. With decreasing hole size, the resistance of the samples increases. Filling the holes with Au or Al increases and decreases the resistance, respectively. All samples show a negative magnetoresistance, which becomes more pronounced with decreasing hole diameter. The filling of the holes with Au or Al reduces the effects of the artificial structuring on the magnetoresistance.