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Ultrafast dynamics of photoexcited charge carriers in nanocrystalline diamond

机译:纳米晶金刚石中光激发电荷载流子的超快动力学

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We report on ultrafast charge carrier dynamics in sub-band-gap energy states in nanocrystalline diamond self-supporting membranes prepared by plasma-enhanced chemical vapor deposition technique. The obtained data are hence not influenced by the substrate effects. Results of the femtosecond transient transmission and photoluminescence laser spectroscopy indicate relaxation of photoexcited carriers with the time constants of the order of 1 ps. This is attributed to an ultrafast spatial separation of holes and electrons at the surface of nanocrystals. Only the carrier population photoexcited in energy levels of 1.68 eV silicon related center decays on a much longer time scale with the time constant of 2.4 ns.
机译:我们报告了通过等离子增强化学气相沉积技术制备的纳米晶体金刚石自支撑膜中亚带隙能态的超快电荷载流子动力学。因此,所获得的数据不受衬底效应的影响。飞秒瞬态透射和光致发光激光光谱的结果表明光激发载流子的弛豫时间常数约为1 ps。这归因于纳米晶体表面的空穴和电子的超快速空间分离。只有在能量水平为1.68 eV的硅相关中心处被光激发的载流子群会在更长的时间尺度上以2.4 ns的时间常数衰减。

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