Direct electrical measurement of an individual α-Fe_2O_3 nanobridge field effect transistor formed via one-step thermal oxidation

Li-Chieh Hsu; Yuan-Yao Li

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Direct electrical measurement of an individual α-Fe_2O_3 nanobridge field effect transistor formed via one-step thermal oxidation

机译：通过一步热氧化形成的单个α-Fe_2O_3纳米桥场效应晶体管的直接电测量

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An α-Fe_2O_3 nanobridge (NB) was laterally grown via the one-step thermal oxidation of 150 nm Fe film at 350 ℃ for 1 h in air atmosphere to form a NB field effect transistor (FET). The diameter of the as-grown NB was 7 nm, with a length of 170 nm. The electrical properties of the individual α-Fe_2O_3 NB were directly measured by microprobing the NB FET. The results show that the NB demonstrated N-type semiconductive behavior with a conductivity of 1.67 S/cm.

机译：通过在空气中于350℃下150 nm Fe薄膜的一步热氧化在1个小时的横向生长a-Fe_2O_3纳米桥（NB），以形成NB场效应晶体管（FET）。生长的NB的直径为7 nm，长度为170 nm。通过微探测NB FET直接测量单个α-Fe_2O_3NB的电性能。结果表明，NB表现出N型半导体行为，导电率为1.67 S / cm。

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《Applied Physicsletters》 |2008年第8期|229-231|共3页
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Li-Chieh Hsu; Yuan-Yao Li;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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入库时间 2022-08-18 03:20:44

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机译：透水基三极管，对置栅 - 源晶体管和异质结构发射弹道场效应晶体管比较电性能的数值模拟

Direct electrical measurement of an individual α-Fe_2O_3 nanobridge field effect transistor formed via one-step thermal oxidation

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