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首页> 外文期刊>Applied Physicsletters >Relation Between Magnetoresistance And Nanostructurernof Current-perpendicular-to-plane Giant-magnetoresistance Filmrnwith Current-confined-path Nano-oxide Layer
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Relation Between Magnetoresistance And Nanostructurernof Current-perpendicular-to-plane Giant-magnetoresistance Filmrnwith Current-confined-path Nano-oxide Layer

机译:电流限制路径纳米氧化物层的电流-垂直-平面超磁阻膜与磁阻和纳米结构的关系

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摘要

Nanostructure of a current-perpendicular-to-plane giant-magnetoresistance film with a current-confined-path (CCP) nano-oxide layer was analyzed by high-resolution transmission electron microscopy and three-dimensional atom probe. It was found that the CCP of a film with a higher magnetoresistance (MR) ratio has better crystalline orientation and higher purity than the CCP of a film with a smaller MR ratio. Moreover, the free layer on the CCP of a film with a high MR ratio is well crystallized. Both the CCP with the good crystalline orientation and high purity and the well-crystallized free layer diminish the diffusive electron scattering, which improves an MR ratio.
机译:通过高分辨率透射电子显微镜和三维原子探针分析了具有电流限制路径(CCP)纳米氧化物层的电流垂直于平面的超磁阻膜的纳米结构。发现与具有较小MR比的膜的CCP相比,具有较高磁阻(MR)比的膜的CCP具有更好的结晶取向和较高的纯度。此外,具有高MR比的膜的CCP上的自由层被良好地结晶。具有良好的晶体取向和高纯度的CCP和良好结晶的自由层都减小了扩散电子散射,这改善了MR比。

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