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FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures
FeTa nano-oxide layer in pinned layer for enhancement of giant magnetoresistance in bottom spin valve structures
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机译:固定层中的FeTa纳米氧化物层可增强底部自旋阀结构的巨大磁阻
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摘要
A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.
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