[[abstract]]The magnetoresistance (MR) ratio is enhanced by 35% by inserting the nano-oxide layer (NOL) at the Ta/Co interface in the FeMn-based top spin valves (Ta/NOL/Co/Cu/Co/FeMn/Ta). The enhancement is attributed to specular reflection, resulting in a large resistance change and small sheet resistance. However, the formation of NOL at the interface of Ta/Co suppresses the (111) texture, resulting in small exchange fields. Top spin valves with NOLs show good thermal stability up to 200 degreesC annealing. The MR ratio is further increased after annealing at temperatures below 200 degreesC. Enhancement of the MR ratio by 61% can be achieved by annealing at 150 degreesC. For bottom spin valves (Ta/NiFe/FeMn/Co/Cu/NiFe/Ta), NOLs formed at FeMn/Co and NiFe/Ta interfaces increase MR ratios, but NOLs at Co/Cu or Cu/NiFe deteriorate the differential spin scattering and significantly reduce MR ratios.
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机译：[[摘要]]通过在FeMn基顶部自旋阀（Ta / NOL / Co / Cu / Co）的Ta / Co界面处插入纳米氧化物层（NOL），将磁阻（MR）比提高了35％ / FeMn / Ta）。增强归因于镜面反射，导致较大的电阻变化和较小的薄层电阻。但是，在Ta / Co界面处形成NOL会抑制（111）织构，导致交换场较小。具有NOL的顶部旋转阀在高达200摄氏度的退火温度下显示出良好的热稳定性。在低于200摄氏度的温度下退火后，MR比进一步提高。通过在150℃下退火，可以使MR比提高61％。对于底部自旋阀（Ta / NiFe / FeMn / Co / Cu / NiFe / Ta），在FeMn / Co和NiFe / Ta界面处形成的NOL会增加MR比，但在Co / Cu或Cu / NiFe处的NOL会降低自旋散射。并显着降低MR率。
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