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FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
FeTa nano-oxide layer as a capping layer for enhancement of giant magnetoresistance in bottom spin valve structures
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机译:FeTa纳米氧化物层作为覆盖层,用于增强底部自旋阀结构中的巨磁阻
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摘要
A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.
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