Studies of current-perpendicular-to-plane magnetoresistance (CPP-MR) and current-induced magnetization switching (CIMS).

摘要

We present two CPP-MR studies of spin-valves based upon ferromagnetic/nonmagnetic/ferromagnetic (F/N/F) trilayers.; We measure the spin-diffusion lengths of N = Pd, Pt, and Au at 4.2K, and both the specific resistances (sample area A times resistance R) and spin-memory-loss of N/Cu interfaces. Pd, Pt and Au are of special device interest because they give perpendicular anisotropy when sandwiching very thin Co layers. Comparing our spin-memory-loss data at Pd/Cu and Pt/Cu interfaces with older data for Nb/Cu and W/Cu gives insight into the importance of spin-orbit coupling in producing such loss.; We reproduce and extend prior studies by Eid of 'magnetic activity' at the interface of Co and N-metals (or combinations of N-metals), when the other side of the N-metal contacts a superconductor (S). Our data suggest that magnetic activity may require strong spin-flipping at the N/S interface.; We present five studies of a new phenomenon, CIMS, in F1/N/F2 trilayers, with F1 a thick 'polarizing' layer and F2 a thin 'switching' layer.; In all prior studies of CIMS, positive current caused the magnetization of F2 to switch from parallel (P) to anti-parallel (AP) to that of F1- 'normal' switching. By judicious addition of impurities to F-metals, we are able to controllably produce both 'normal' and 'inverse' switching- where positive current switches the magnetization of F2 from AP to P to that of F1. In the samples studied, whether the switching is normal or inverse is set by the 'net polarization' produced by F1 and is independent of the properties of F2. As scattering in the bulk of F1 and F2 is essential to producing our results, these results cannot be described by ballistic models, which allow scattering only at interfaces.; Most CIMS experiments use Cu as the N-layer due to its low resistivity and long spin-diffusion length. We show that Ag and Au have low enough resistivities and long enough spin-diffusion lengths to be useful alternatives to Cu for some devices.; While most technical applications of CIMS require low switching currents, some, like read-heads, require high switching currents. We show that use of a synthetic antiferromagnet can increase the switching current.; Manschot et al. recently predicted that the positive critical current for switching from P to AP could be reduced by up to a factor of five by using asymmetric current leads. In magnetically uncoupled samples, we find that highly asymmetric current leads do not significantly reduce the switching current.; A CIMS equation given by Katine et al. predicts that lowering the demagnetization field should reduce the switching current. To test this prediction, we compare switching currents for Co/Au/Co(t)/Au nanopillars with t = 1 to 4 nm (where the easy axis should be normal to the layer planes at least for t = 1 and 2 nm) with those for Co/Cu/Co(t)/Au nanopillars (where the easy axis should be in the layer planes). We do not find significant differences in switching currents for the two systems.