Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe_3Si/FeSi_2 artificial lattices

摘要

Current-perpendicular-to-plane (CPP) junctions of Fe_3Si/FeSi_2 were fabricated from Fe_3Si/FeSi_2 artificial lattice films, which were prepared by facing-target direct-current sputtering, by employing a focused ion beam (FIB) technique. CPP structurization was confirmed by scanning electron microscopy. The CPP junctions, in which antiferromagnetic interlayer coupling is induced between the Fe_3Si layers, exhibited a clear hysteresis loop in the electrical resistance for current injection, which is probably due to current-induced magnetization switching. The critical current density for it is approximately 3.3 × 10~1 A/cm~2, which is at least four orders smaller than the values that have ever been reported.