Enhancement of magnetoresistance by hydrogen ion treatment for current-perpendicular-to-plane giant magnetoresistive films with a current-confined-path nano-oxide layer

摘要

We have enhanced magnetoresistance (MR) for current-perpendicular-to-plane giant-magnetoresistive (CPP-GMR) films with a current-confined-path nano-oxide layer (CCP-NOL). In order to realize higher purity in Cu for CCPs, hydrogen ion treatment (HIT) was applied as the CuO_x reduction process. By applying the HIT process, an MR ratio was increased to 27.4% even in the case of using conventional FeCo magnetic layer, from 13.0% for a reference without the HIT process. Atom probe tomography data confirmed oxygen reduction by the HIT process in the CCP-NOL. The relationship between oxygen counts and MR ratio indicates that further oxygen reduction would realize an MR ratio greater than 50%.