Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment

Hung-Cheng Lin; Ruo-Syuan Lin; Jen-Inn Chyi

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Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment

机译：通过三甲基铟处理提高InGaN绿色发光二极管的量子效率

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This work demonstrates the effectiveness of using trimethylindium (TMIn) treatment to improve the luminescence efficiency of InGaN/GaN quantum wells grown by metal-organic vapor-phase epitaxy. Photoluminescence, x-ray diffraction, atomic force microscopy,

机译：这项工作证明了使用三甲基铟（TMIn）处理来提高通过金属有机气相外延生长的InGaN / GaN量子阱的发光效率的有效性。光致发光，x射线衍射，原子力显微镜，

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来源
《Applied Physicsletters》 |2008年第16期|36-38|共3页
作者
Hung-Cheng Lin; Ruo-Syuan Lin; Jen-Inn Chyi;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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入库时间 2022-08-18 03:20:35

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1. Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well [J] . Hongjian Li, Panpan Li, Junjie Kang, _Applied Physics Express . 2013,第5期

机译：浅量子阱增强530 nm InGaN绿色发光二极管的量子效率
2. Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes [J] . Li Zhong-Hui, Yu Tong-Jun, Yang Zhi-Jian, Chinese physics letters . 2004,第9期

机译：InGaN阱的生长温度和三甲基铟流量对InGaN多量子阱紫光发光二极管光学性能的影响
3. Influence of Growth Temperature and Trimethylindium Flow of InGaN Wells on Optical Properties of InGaN Multiple Quantum-Well Violet Light-Emitting Diodes [J] . 李忠辉, 于彤军, 杨志坚, 中国物理快报：英文版 . 2004,第009期

机译：InGaN阱的生长温度和三甲基铟流量对InGaN多量子阱紫光发光二极管光学性能的影响
4. High Efficiency Green Light-Emitting Diodes based on InGaN-ZnGeN_2 Type-Ⅱ Quantum Wells [C] . Lu Han, Kathleen Kash, Hongping Zhao Conference on light-emitting diodes: Materials, devices, and applications for solid state lighting XVIII . 2014

机译：基于InGaN-ZnGeN_2Ⅱ型量子阱的高效绿色发光二极管
5. Enhancement of Internal Quantum Efficiency and Optical Gain for Nitride Light-Emitting Diodes and Laser Diodes. [D] . Zhao, Hongping. 2011

机译：增强氮化物发光二极管和激光二极管的内部量子效率和光学增益。
6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
7. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：渐变铟组合物P型Ingan层的甘油基绿光二极管量子效率提高
8. Enhancement of Radiative Efficiency with Staggered InGaN Quantum Well Light Emitting Diodes. [R] . Tansu, N. 2013

机译：交错InGaN量子阱发光二极管提高辐射效率。

Enhancing the quantum efficiency of InGaN green light-emitting diodes by trimethylindium treatment

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