Composition dependence of the hole mobility in GaSb_xAs_(1-x)

K. Albert; O. D. Dubon; W. Walukiewicz; K. M. Yu; J. A. Gupta; J.-M. Baribeau

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Composition dependence of the hole mobility in GaSb_xAs_(1-x)

机译：GaSb_xAs_（1-x）中空穴迁移率的成分依赖性

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The unusually low hole mobility observed in heavily p-type doped dilute GaSb_xAs_(1-x) alloys is explained in the context of the valence band anticrossing model. The anticrossing interaction between the localized p-states of the Sb atoms and the extended

机译：在价带反交叉模型的背景下解释了在重p型掺杂的稀GaSb_xAs_（1-x）合金中观察到的异常低的空穴迁移率。 Sb原子的局部p态与扩展的原子之间的反交叉相互作用

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《Applied Physicsletters》 |2008年第16期|87-89|共3页
作者
K. Albert; O. D. Dubon; W. Walukiewicz; K. M. Yu; J. A. Gupta; J.-M. Baribeau;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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入库时间 2022-08-18 03:20:35

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Composition dependence of the hole mobility in GaSb_xAs_(1-x)

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