Reduced leakage current in chemical solution deposited multiferroic BiFeO_3/Ba_(0.25)Sr_(0.75)TiO_3 heterostructured thin films on platinized silicon substrates

摘要

Multilayered metal-insulator-metal structures with BiFeO_3 and Ba_0.25)Sr_(0.75)TiO_3 thin films were fabricated by chemical solution deposition to reduce the leakage current through the capacitor stack. The Ba_(0.25)Sr_(0.75)TiO_3 layer does not influenc