首页> 外文期刊>Integrated Ferroelectrics >Dielectric Enhancement Effect in (Ba_(0.7)Sr_(0.3)TiO_3/Ba_(0.5)Sr_(0.5)TiO_3)_n (n = 1,2,3,4) Multilayered Thin Films Deposited by Chemical Solution Deposition Method
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Dielectric Enhancement Effect in (Ba_(0.7)Sr_(0.3)TiO_3/Ba_(0.5)Sr_(0.5)TiO_3)_n (n = 1,2,3,4) Multilayered Thin Films Deposited by Chemical Solution Deposition Method

机译:(Ba_(0.7)Sr_(0.3)TiO_3 / ba_(0.5)Sr_(0.5)TiO_3)_N(n = 1,2,3,4)多层薄膜通过化学溶液沉积方法施用介电增强效应

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摘要

Multilayered Ba_(0.7)Sr_(0.3)TiO_3/Ba_(0.5)Sr_(0.5)TiO_3 (BST0.7/0.5)_n (n = 1, 2, 3 and 4, respectively) thin films with different layered periods are prepared on Pt/TiO_2/SiO_2/Si substrates by chemical solution deposition method. The microstructure and dielectric properties of the films are investigated systematically. Obvious dielectric enhancement occurs in (BSTO.7/0.5),, multilayer comparing with Ba_(0.5)Sr_(0.5)TiO_3 and Ba_(0.7)Sr_(0.3)TiO_3 monolay-ered thin films due to Maxwell-Wagner effect. On the other hand, strain and grain sizes of the multilayered thin films can also affect the dielectric properties. Specially, the (BST0.7/0.5)2 shows the best dielectric properties with dielectric constant of 557, loss tangent of 0.025 and tunability of 46% at 200 KHz, which is beneficial in applications.
机译:制备多层BA_(0.7)SR_(0.3)TiO_3 / BA_(0.5)SR_(0.5)TiO_3(分别为具有不同分层周期的薄膜(n = 1,2,3和4)的薄膜 Pt / TiO_2 / SiO_2 / Si基材通过化学溶液沉积法。 系统地研究了膜的微观结构和介电性能。 在(Bsto.7 / 0.5)中发生明显的介电增强,多层与Ba_(0.5)Sr_(0.5)TiO_3和Ba_(0.7)Sr_(0.3)TiO_3单层磨薄膜引起的Maxwell-Wagner效应相比。 另一方面,多层薄膜的菌株和晶粒尺寸也可以影响介电性质。 特别地,(BST0.7 / 0.5)2显示了具有557的介电常数的最佳电介质性能,0.025的损耗切线和200kHz的可调性为46%,这是有益的应用。

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