METHOD OF MANUFACTURING AN ARRAY SUBSTRATE INCLUDING A THIN FILM TRANSISTOR USING POLY SILICON, CAPABLE OF REDUCING A LEAKAGE CURRENT

摘要

PURPOSE: A method of manufacturing an array substrate including a thin film transistor using poly silicon is provided to configure the thin film transistor by using poly silicon as a semiconductor layer, thereby improving a mobility feature.;CONSTITUTION: A data line(220) is formed on a substrate(201). A gate insulating layer(210) and a gate line are formed. A gate electrode(205) is formed to be overlapped with the spacing area of source/drain electrodes. A pixel electrode(240) contacting the drain electrode through a drain contact hole(233) is formed in a pixel area.;COPYRIGHT KIPO 2010