Erasing characteristics of Cu_2O metal-insulator-metal resistive switching memory

摘要

The erasing characteristics of Cu_2O metal-insulator-metal resistive switching memory were measured on a 64 Kb memory test array. The erasing yield reaches the maximum at an optimal erasing voltage. Effective erasing requires a threshold current compliance that is higher for shorter pulse width. The erasing current and erasing power both depend strongly on the on-state before erasing, while the erasing voltage is essentially unaffected. Erasing appears to be a power-driven process, which may be related to the thermal effect of power dissipation. The experimental data and analysis suggest that erasing can be explained by field-assisted thermal emission of trapped charges.