Switching characteristics of Cu_2O metai-insulator-metal resistive memory

摘要

The Cu_2O metal-insulator-metal (MIM) resistive switching memory was characterized on a 64 kb memory test array. The switching properties are consistent with the proposed switching model of conductivity modulation by a charge trapping process. Retention, programing characteristics, and temperature effects are analyzed based on the switching model. The measured characteristics and the switching model for Cu_2O MIM are compared with those of other resistive switching materials. The statistical characteristics provide essential evidence for analysis of the switching mechanism and evaluation of the memory devices.