机译:在c平面和m平面InGaN发光二极管中的载流子溢出
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA;
Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA;
Kyma Technologies, Inc., Raleigh, North Carolina 27617, USA;
机译:载气和衬底取向错误对m面InGaN / GaN发光二极管的结构和光学性质的影响
机译:m平面GaN单晶上的无位错m平面InGaN / GaN发光二极管
机译:在自由m平面GaN衬底上的非极性m平面InGaN / GaN发光二极管的演示
机译:在c和m平面InGaN发光二极管中的载流子溢出
机译:高效紫色和蓝色IngaN微胶囊发光二极管
机译:非极性m面InGaN / GaN发光二极管的有效载流子注入传输弛豫和复合与更强的载流子定位和低极化效应相关
机译:在c和m平面InGaN发光二极管中的载流子溢出