Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates

摘要

We report the fabrication of nonpolar m-plane InGaN/GaN multiple-quantum well light-emitting diodes (LEDs) on freestanding m-plane GaN substrates. On-wafer continuous wave output power of 240 μW was measured at 20 mA for a 300 x 300 μm~2 device, and output power as high as 2.95 mW was measured at 300 mA. There was no sign of saturation of the output power at high drive currents. An emission peak at 450 nm was obtained on electroluminescence measurements with high drive currents. The current-voltage characteristics of these LEDs showed rectifying behavior with a turn-on voltage of 3-4 V.