机译:在独立m面GaN衬底上生长的InGaN / GaN发光二极管的形态演变
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA,Materials Department, University of California, Santa Barbara, California 93106, USA;
Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA,Materials Department, University of California, Santa Barbara, California 93106, USA;
Materials Department, University of California, Santa Barbara, California 93106, USA;
机译:在独立m面GaN衬底上生长的InGaN / GaN发光二极管的形态演变
机译:在自由m平面GaN衬底上的非极性m平面InGaN / GaN发光二极管的演示
机译:在独立式GaN衬底上生长的InGaN / GaN多量子阱蓝色发光二极管中的效率下降
机译:基于ingan / gan / alggs的激光二极管在独立的GaN基板上生长
机译:以极性,半极性和非极性方向生长的InGaN / GaN多量子阱发光二极管。
机译:在a平面和m平面GaN衬底上生长的InGaN / GaN多量子阱的光学和偏振特性的研究
机译:非极性垂直GaN-On-GaN P-N二极管在自由站立$(10 bar {1} 0)$ M平面GAN基板上生长