机译:纳米晶尺寸对嵌入SiO_2基体中的硅纳米晶介电函数的影响
Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
Department of Optical Science and Engineering, School of Information Science and Engineering, Fudan University, Shanghai 200433, China;
机译:纳米尺寸对Si离子注入合成SiO_2中Si纳米晶体光学性能的影响
机译:热退火对嵌入SiO_2基体中的硅纳米晶体的带隙和介电函数的影响
机译:SiO / SiO_2薄膜电子束蒸发法制备单层和双层Si纳米晶体
机译:Si离子注入合成的SiO_2中隔离的Si纳米晶与致密堆积的Si纳米晶层介电功能的比较研究
机译:粒子间对纳米晶体的尺寸和尺寸分布演变的影响。
机译:电介质天线的几何对称性影响量子尺寸的金属纳米晶体中的光吸收:一个比较研究
机译:热退火对siO 2基体中硅纳米晶的带隙和介电函数的影响