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Force modulation of tunnel gaps in metal oxide memristive nanoswitches

机译:金属氧化物忆阻纳米开关中隧道间隙的力调制

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摘要

Electron tunneling plays a key role in computing devices. Tunneling is. however, notoriously difficult to characterize inside real device structures. Using pressure modulated conductance microscopy, we demonstrate in situ angstrom-scale tuning and estimation of tunnel gaps with ~ 10 nm lateral resolution. By modulating tunnel gaps in Pt/TiO_x/Pt memristive oxide nanoswitches, we establish that these devices switch via 2-9 A modification of the tunnel gap.
机译:电子隧穿在计算设备中起关键作用。隧道是。然而,众所周知,很难在真实的设备结构内部进行表征。使用压力调制电导显微镜,我们以〜10 nm的横向分辨率证明了原位埃规模的调谐和隧道间隙的估计。通过调节Pt / TiO_x / Pt忆阻氧化物纳米开关中的隧道间隙,我们确定这些器件通过2-9 A的隧道间隙修正进行开关。

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  • 来源
    《Applied Physicsletters》 |2009年第11期|113503.1-113503.3|共3页
  • 作者单位

    Department of Physics and Astronomy, University of California, Riverside, California 92521, USA Information and Quantum Systems Lab, Hewlett-Packard Laboratories, Palo Alto, California 94304, USA;

    Information and Quantum Systems Lab, Hewlett-Packard Laboratories, Palo Alto, California 94304, USA;

    Information and Quantum Systems Lab, Hewlett-Packard Laboratories, Palo Alto, California 94304, USA;

    Information and Quantum Systems Lab, Hewlett-Packard Laboratories, Palo Alto, California 94304, USA National Research Council of Canada. 100 Sussex Dr., Ottawa. ON K1A 0R6, Canada;

    Information and Quantum Systems Lab, Hewlett-Packard Laboratories, Palo Alto, California 94304, USA;

    Department of Physics and Astronomy, University of California, Riverside, California 92521, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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  • 入库时间 2022-08-18 03:19:52

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