Interaction of phosphorus with dislocations in heavily phosphorus doped silicon

摘要

Effects of annealing at 1173 K, that is comparable to the typical temperatures for the fabrication of Si-based devices, on the dissociated dislocations in Czochralski-grown silicon crystals heavily doped with phosphorus atoms were determined. Dislocation segments with edge component are constricted. They climbed out of the slip plane toward the compression side, forming complete dislocation segments. The dissociation width of the rest segments is increased. These results suggest that phosphorus atoms segregate nearby dislocations and the high doping level at the dislocations lowers the formation energy of negatively charged vacancies.