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m-plane pure blue laser diodes with p-GaN-AIGaN-based asymmetric cladding and InGaN-based wave-guiding layers

机译：具有基于p-GaN / n-AIGaN的不对称包层和基于InGaN的波导层的m平面纯蓝色激光二极管

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摘要

Asymmetric p-GaN-AlGaN-cladded InGaN-based pure blue (440-460 nm) laser diodes were fabricated based on the nonpolar m-plane GaN technology. Simulation results showed high indium content (5%-10%) InGaN wave-guiding layers mainly contributed to the optical confinement, so that w-AlGan layer can be used to control of the peak position of the optical mode to achieve high optical confinement factor and low internal loss. By using this laser structure, lasing wavelengths of 443 and 465 nm with threshold current densities 14 and 19 kA/cm~2, respectively, were demonstrated without facet coating.
机译：基于非极性m面GaN技术制造了不对称p-GaN / n-AlGaN包覆的InGaN基纯蓝色（440-460 nm）激光二极管。仿真结果表明，高铟含量（5％-10％）的InGaN波导层主要有助于光学限制，因此w-AlGan层可用于控制光学模式的峰值位置以实现高光学限制因子内部损失低。通过使用这种激光结构，在没有刻面涂层的情况下，激光波长分别为443和465 nm，阈值电流密度分别为14和19 kA / cm〜2。

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  • 来源
    《Applied Physicsletters》 |2009年第8期|081110.1-081110.3|共3页
  • 作者

    You-Da Lin; Chia-Yen Huang; Matthew T. Hardy; Po Shan Hsu; Kenji Fujito; Arpan Chakraborty; Hiroaki Ohta; James S. Speck; Steven P. DenBaars; Shuji Nakamura;

  • 作者单位

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA;

    Department of Materials, University of California, Santa Barbara, California 93106, USA;

    Department of Materials, University of California, Santa Barbara, California 93106, USA;

    Department of Materials, University of California, Santa Barbara, California 93106, USA;

    Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan;

    Department of Materials, University of California, Santa Barbara, California 93106, USA;

    Department of Materials, University of California, Santa Barbara, California 93106, USA;

    Department of Materials, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA Department of Materials, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA Department of Materials, University of California, Santa Barbara, California 93106, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 入库时间 2022-08-18 03:19:49

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