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首页> 外文期刊>Applied Physics Letters >High-power blue-violet AIGaN-cladding-free m-plane InGaN/GaN laser diodes
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High-power blue-violet AIGaN-cladding-free m-plane InGaN/GaN laser diodes

机译：大功率蓝紫色AIGaN无覆层m面InGaN / GaN激光二极管

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摘要

We demonstrate AlGaN-cladding-free (ACF) m-plane InGaN/GaN laser diodes (LDs) with peak output powers and estimated front facet optical power densities that are comparable to the state-of-the-art single-stripe emitter c-plane LDs. The threshold current density, slope efficiency, and peak output power were 4.66 Ka/cm~2, 1.29 W/A, and 1.6 W, respectively, after facet coating and under pulsed conditions. Catastrophic optical mirror damage was not observed up to an estimated optical power density of 51.2MW/cm~2 at the front mirror facet, indicating the potential for using ACF m-plane InGaN/GaN LDs in high-power LD applications.
机译：我们演示了无AlGaN覆层（ACF）m平面InGaN / GaN激光二极管（LD），其峰值输出功率和估计的正面小面光功率密度可与最新的单条纹发射器c-相媲美。平面LD。经过小平面涂覆和在脉冲条件下，阈值电流密度，斜率效率和峰值输出功率分别为4.66 Ka / cm〜2、1.29 W / A和1.6W。直到在前镜面的估计光功率密度达到51.2MW / cm〜2时，都没有观察到灾难性的光学镜损坏，这表明在高功率LD应用中使用ACF m平面InGaN / GaN LD的潜力。

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  • 来源
    《Applied Physics Letters》 |2011年第17期|p.171113.1-171113.3|共3页
  • 作者

    R. M. Farrell; D. A. Haeger; P. S. Hsu; M. C. Schmidt; K. Fujito; D. F. Feezell; S. P. DertBaars; J. S. Speck; S. Nakamura;

  • 作者单位

    Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku,Ibaraki 300-1295, Japan;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA Materials Department, University of California, Santa Barbara, California 93106, USA;

    Materials Department, University of California, Santa Barbara, California 93106, USA;

    Department of Electrical and Computer Engineering, University of California, Santa Barbara,California 93106, USA Materials Department, University of California, Santa Barbara, California 93106, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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